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sale 4*8cm triple junction gaas cell is used for nanosatellite and cubesat application. You can also use it into tracking system etc. It has high efficiency and triple junction and crisp feature to make it flexbile.
Technical data for 4*8cm Triple junction Gallium arsenide solar cell
| 1、Solar Cell Schematic Structure | |||
| n-on-p structure, Ge substrate | |||
| GaInP/InGaAs/Ge Triple Junction Solar Cell | |||
| Al2O3/TiOX DARC | |||
| Method of GaAs growth: MOCVD | |||
| 2、Features | |||
| Bare cell | |||
| Area: 30.15mm2 | |||
| Size: 80.0mm×40.0mm | |||
| Thickness: 155±20 um | |||
| CIC | |||
| Size: Drawing 1 | |||
| 3、Typical Electrical Parameters | |||
| (AM0, 135.3mW/cm2, 25℃) | |||
| Jsc=17.2mA/cm2 | |||
| Voc=2.70V | |||
| Vm=2.36 | |||
| Jm=16.4 | |||
| Eff= 30% | |||
| 4. Thermal Properties | |||
| Solar Absorptance ≤ 0.92 | |||
| Emittance (Normal)= 0.84±0.02 | |||
| 5. Radiation Degradation ( Fluence 1MeV ) | |||
| Parameters | 1×1014e/cm2 | 5×1014e/cm2 | 1×1015e/cm2 |
| Imp/Imp0 | 0.99 | 0.96 | 0.94 |
| Vmp/Vmp0 | 0.94 | 0.92 | 0.91 |
| Pmp/Pmp0 | 0.93 | 0.88 | 0.85 |
| 6. Temperature Coefficients (15℃～75℃) | |||
| Parameters | BOL | 1 MeV, 5×1014e/cm2 | |
| Jsc (uA/cm2/℃) | 5 | 6 | |
| Voc (mV/℃) | -6.2 | -6.6 | |
